Issue 45, 2021
From the journal:

Chemical Communications

Heterostructures between a tin-based intermetallic compound and a layered semiconductor for gas sensing†

Jusheng Bao,a   Shaoyu Zeng,a   Jie Dai,a   Xiaoshan Wang,b   Qiang Liu,a   Hai Li, ORCID logo *a   Xiao Huang ORCID logo *a  and  Wei Huang*ab  

* Corresponding authors

a Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, China
E-mail: iamhli@njtech.edu.cn, iamxhuang@njtech.edu.cn

b Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi’an 710072, China
E-mail: iamwhuang@nwpu.edu.cn

Abstract

SnS2 nanoplates are used as sacrificial templates to facilitate the in situ growth of intermetallic compound Pt3Sn nanoparticles. The Pt3Sn/SnS2 heterostructures show promise for selective NO2 sensing due to the favored gas adsorption and gas–solid charge transfer on Pt3Sn, combined with the optimized film conductance and formation of ohmic-type Pt3Sn/SnS2 heterointerfaces.

Graphical abstract: Heterostructures between a tin-based intermetallic compound and a layered semiconductor for gas sensing

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Article information

DOI
https://doi.org/10.1039/D1CC00015B
Article type
Communication
Submitted
02 Jan 2021
Accepted
27 Apr 2021
First published
28 Apr 2021

Chem. Commun., 2021,57, 5590-5593

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Heterostructures between a tin-based intermetallic compound and a layered semiconductor for gas sensing

J. Bao, S. Zeng, J. Dai, X. Wang, Q. Liu, H. Li, X. Huang and W. Huang, Chem. Commun., 2021, 57, 5590 DOI: 10.1039/D1CC00015B

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