Ultrahigh thermoelectric performance of Janus α-STe2 and α-SeTe2 monolayers

Abstract

Janus α-STe₂ and α-SeTe₂ monolayers are investigated systematically using first-principles calculations combined with semiclassical Boltzmann transport theory. Janus α-STe₂ and α-SeTe₂ monolayers are indirect semiconductors with band gaps of 1.20 and 0.96 eV, respectively. It is found that they possess ultrahigh figure of merit (ZT) values of 3.9 and 4.4, respectively, at 500 K, much higher than that of the pristine α-Te monolayer (2.8). The higher ZT values originating from Janus structures reduce lattice thermal conductivities remarkably compared with the pristine α-Te monolayer. The much higher phonon anharmonicity in Janus monolayers leads to significantly lower lattice thermal conductivity. It is also found that electronic thermal conductivity can play an important role in thermoelectric efficiency of materials with quite low lattice thermal conductivity. This work suggests the potential applications of Janus α-STe₂ and α-SeTe₂ monolayers as thermoelectric materials and highlights that using a Janus structure is an effective way to enhance thermoelectric performance.