A volatile heteroleptic open ruthenocene has been synthesised and characterised by NMR and single crystal X-ray diffraction. Using this compound as a precursor and oxygen as a co-reactant, a highly conductive Ru film has been deposited on Si with native oxide at 220 °C. Under the same deposition conditions, the film thickness obtained with the new compound has almost doubled compared to its homoleptic analogue.
R. Kultyshev, I. Harkness, D. B. G. Berry, H. Jobson, H. Marchbank, T. Eralp Erden and L. Ashfield, Dalton Trans., 2025, 54, 2261 DOI: 10.1039/D4DT02466D
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