Epitaxial growth of few-layer MoS2(0001) on FeS2{100}

T. Liu; I. Temprano; D. A. King; S. M. Driver; S. J. Jenkins

doi:10.1039/C4CC06628F

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Epitaxial growth of few-layer MoS₂(0001) on FeS₂{100}†

T. Liu,^a I. Temprano,^a D. A. King,^a S. M. Driver*^a and S. J. Jenkins^a

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^a Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, UK
E-mail: smd37@cam.ac.uk
Fax: +44 (0)1223 336362
Tel: +44 (0)1223 336503

Abstract

Physical vapour deposition of Mo on an FeS₂{100} surface was performed at 170 K. Near-epitaxial growth of MoS₂(0001) overlayers of the order of 1 nm thickness was observed when the Mo-covered substrate was subsequently heated to 600 K.

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Article information

DOI: https://doi.org/10.1039/C4CC06628F
Article type: Communication
Submitted: 22 Aug 2014
Accepted: 13 Nov 2014
First published: 13 Nov 2014
This article is Open Access

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Chem. Commun., 2015,51, 537-540

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Epitaxial growth of few-layer MoS₂(0001) on FeS₂{100}

T. Liu, I. Temprano, D. A. King, S. M. Driver and S. J. Jenkins, Chem. Commun., 2015, 51, 537 DOI: 10.1039/C4CC06628F

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