Xinyu Chenab,
Yanqing Qinb,
Diwei Shic,
Yaolin Guob,
Moran Bub,
Tao Yanb,
Jiexi Songd,
Guoquan Liu*a,
Yiming Zhang*b and
Shiyu Du*b
aSchool of Sciences, Hebei University of Science and Technology, Shijiazhuang 050018, China. E-mail: liuguoquan62@126.com
bEngineering Laboratory of Nuclear Energy Materials, Ningbo Institute of Industrial Technology & Engineering, Chinese Academy Sciences, No. 1219 Zhongguan West Road, Zhenhai District, Ningbo, Zhejiang Province 315201, P. R. China. E-mail: dushiyu@nimte.ac.cn; ymzhang@nimte.ac.cn
cSchool of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
dDepartment of Applied Physics, Northwestern Polytechnical University, Xi'an 710072, China
First published on 22nd September 2020
U3Si2 has been tested as a new type of nuclear fuel, and Al has been proven to improve its oxidation resistance. However, there is no research on its anisotropic mechanical and thermal properties. The mechanical and thermal properties of Al-alloyed U3Si2 nuclear fuel are calculated on the basis of first principles. Through the phonon dispersion curves, two kinetic stable structures sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I) are screened out. It is found that the toughness of these two compounds after alloying are significantly improved compared to U3Si2. The three-dimensional Young's modulus shows that, the sub-U3Si1.5Al0.5 formed by Al alloying in U3Si2 maintains a higher mechanical isotropy, while sub-U2.5Si2Al0.5(I) shows higher mechanical anisotropy, which is consistent with the value of Au. The calculation result shows that the lattice thermal conductivity of sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I) after alloying exhibits high isotropy as the temperature increases.
One type of ideal candidate material for ATFs is uranium-silicon fuel,9,10 and there have been studies on the microstructure changes of uranium-silicon alloys under irradiation conditions.11 The currently known types of uranium silicon compounds are U3Si2, U3Si, USi2, USi and so on. U3Si2 has ultra-high thermal conductivity and high uranium-containing density among uranium silicon compounds, which has attracted many researchers' attentions.10,12,13 Due to poor mechanical performance and antioxidant capacity, alloying the U3Si2 is an effective solution for further application within light water reactors.14 Wood et al.15 studied the effect of adding Al elements into U3Si2 on their performance through thermal reanalysis, and the investigation showed that U3Si2 oxidation behavior could be postponed, which confirmed that U3Si2 antioxidant resistance was improved by adding Al elements.
Experimental and theoretical studies on the U–Si–Al ternary system have been carried out around the world over past years. Marín et al.16 mixed the U3Si2 powder with Al to produce intermetallic compound U(Al,Si)3 at melting temperature of aluminum, indicating that this strategy could be adopted to manufacture U3Si2–Al dispersed fuel. Wang et al.17 observed the occurrence and spread of interlayer cracks within U3Si2–Al dispersed fuel plates by scanning electron microscopy and analyzed the mechanisms of the crack formation; and proved that their mechanical properties, especially fatigue properties, were greatly influenced by the processing method of the fuel plates. Through transmission electron microscope, Gan et al.18 observed the average diameter, number density and volume fraction of the fuel matrix interaction layer (Si–Al)/U of U3Si–Al fuel plate after irradiation, as well as the average diameter, number density and volume fraction of small bubbles within the fuel particles; and discussed their effects on fuel performance. Rabin et al.19 established a thermodynamic model of the U–Si–Al ternary system using computational phase diagram method, and conducted novel experiments in the aluminum-silicon-depleted uranium area; which showed that under equilibrium conditions, the silicon content of U(Al,Si)3 is significantly higher than previously reported ones. Zenou et al.20 used electron crystallography and powder X-ray diffraction techniques to study the structure and bonding of a stable ordered U(Al,Si)3 phase, and results showed that Si was locating closer to U than Al; and when the energy was stable, the U–Si bond energy was stronger than the U–Al bond energy. Mirandou et al.21 studied two U3Si2–Al fuel plates by scanning electron microscopy and transmission electron microscopy, and the results showed that the final structure was composed of U(Al,Si)3 and some modified U3Si2 phase which had the same crystal structure with U3Si2. Suparlina et al.22 examined the properties of U3Si2–Al fuel plate after irradiation, and the results showed that the properties were satisfied within the limits by safety standards.
Nuclear fuel with enhanced safety requires excellent mechanical property and high thermal conductivity under harsh conditions. The research on the mechanical anisotropy and thermodynamic properties of Al-alloyed U3Si2 ternary compounds have not been studied so far. In this work, including one Si-vacancy position, two U-vacancy positions and three interstitial sites with all different symmetries are selected as Al atom alloying sites. The atomic coordinates for three interstitial sites are (0, 0, 0.5), (0.319, 0.181, 0), (0.611, 0.111, 0.5). Through first-principles calculation of the phonon spectrum, the dynamically stable structures are screened out. The mechanical anisotropy as well as thermodynamic properties of U3Si2–Al ternary compounds are studied. This work will serve as a reference for the design of a new generation of ATF and the establishment of the U–Si–Al ternary phase diagram.
In this work, the optimized total energy cutoff energy of the original unit cell was set to 500 eV, and the k-point meshes were constructed using the Monkhorst–Pack scheme. The 9 × 9 × 9 k-point mesh was used for the primitive cell for Brillouin zone sampling.29 The structural optimization were under the conditions that the total energy difference between two iterations was less than 10–5 eV and the force on the atom was less than 0.01 eV Å−1. The elastic properties in this article are achieved by an effective stress–strain method.30 Periodic boundary conditions were adopted in this work.
The theoretical phonon spectrum was obtained using the Phonopy package.31 The lattice thermal conductivity is obtained by using phono3py,32 where the phonon lattice thermal conductivity and phonon relaxation time were simulated by using the finite displacement method.33 The formula for lattice thermal conductivity is as follow eqn (1):
(1) |
The results shown in previous literatures35,36 are also listed in Table 1 for reference. As shown in Table 1, the lattice constant a (a = b) is 7.24 Å, the value of c is 3.90 Å, and the volume is 204.43 Å3 for primitive U3Si2 by using the method of PBE, which have obvious deviations from the previous experimental and calculated results. When using the PBE+U method to optimize the original U3Si2, the calculation results show that the lattice constant a and c reach 7.39 Å and 3.95 Å, respectively; and the volume is 215.72 Å3. The structural parameters calculated by the PBE+U method are closer to the experimental and calculated values, which proves that the calculation method of PBE+U is effective. Further, the non-spin polarized (non-SP) DFT + U calculations have also been performed to make comparisons with spin polarized (SP) calculations; and the results are listed in Table 1. It can be seen that the results obtained from the spin polarized DFT + U are consistent with the reported experimental results. Therefore, in the following calculations, the PBE+U method is adopted and U = 2.0 with spin polarized (where the magnetic moments for U, Si and Al atoms are 2.46 μB per atom, −0.025 μB per atom, and −0.20 μB per atom, respectively) is chosen as the calculation parameter.
By calculating the phonon dispersion curves, two stable structures are obtained. Fig. 3(a) and Fig. 3(b) are the phonon dispersion curves of sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I), respectively. The phonon dispersion curves of the remaining four are unstable structures due to the appearance of obvious imaginary frequency. As shown in Fig. 3, for sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I), these phonon dispersion curves without imaginary frequency. In order to further determine the dynamic stability of the two structures, the corresponding phonon density of states is also calculated in Fig. 3. The phonon density of states is shown in Fig. 3 without imaginary frequency, implying that the optimized structure of sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I) are dynamically stable. In the following calculations, these two stable structures are used as research target structures.
As proposed by Pugh et al.38 the ductility of a material can be defined through the value of B/G; and 1.75 is specified as a critical value. The materials with their values below 1.75 are treated as brittle, while the ones with values above 1.75 are treated as ductile. The data in Table 2 show that U3Si2, sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I) are all brittle materials, but the B/G values of sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I) after alloying are significant increase and very close to 1.75. Therefore, we can understand that alloying could improve the toughness of the material. In addition, Poisson's ratio is also calculated using the following eqn (2):
(2) |
According to Frantsevich's theory, the value of σ could also be used as a criterion for judging whether the material has ductility, and 0.26 is defined as the critical value.39 The calculation results of U3Si2, sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I) σ are shown in Table 2. The σ values of the three compounds are all less than or equal to 0.26, indicating that they are all brittle materials. However, sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I) have a significant increase compared with U3Si2, which is consistence to the conclusion of B/G.
The anisotropy of elasticity could be characterized by anisotropy index Au, which was proposed by Ranganathan and Ostoja-Starzewski40 and is derived by eqn (3):
(3) |
BV = [C11 + C22 + C33 + 2(C12 + C13 + C23)]/9 | (4) |
GV = [(C11 + C22 + C33) − (C12 + C13 + C23) + 3(C44 + C55 + C66)]/15 | (5) |
BR = 1/[S11 + S22 + S33 + 2(S12 + S13 + S23)] | (6) |
GR = 15/[4(S11 + S22 + S33) − 4(S12 + S13 + S23) + 3(S44 + S55 + S66)] | (7) |
For the tetragonal structure, the same variables from shear modulus, as well as the variables from bulk modulus can be calculated by eqn (8)–(11):42,43
BV = [2(C11 + C12) + 4C13 + C33]/9 | (8) |
GV = (M + 3C11 − 3C12 + 12C44 + 6C66)/30 | (9) |
BR = C11 + C12 + 2C33 − 4C13/C11 + C12 + 2C33 − 4C13 | (10) |
GR = 15/[(18BV)/C2 + 6/(C11 − C12) + 6/C44 + 3/C66] | (11) |
Sij is the elastic compliance constant, and Cij is the elastic constant. From the Au value in Table 2, it can be concluded that U3Si2 has the lowest anisotropy is, followed by sub-U3Si1.5Al0.5, and finally sub-U2.5Si2Al0.5(I).
Next, the three-dimensional Young's modulus diagram is used to visually explore the anisotropy of elasticity. For tetragonal and orthogonal structures, the three-dimensional Young's modulus is expressed using eqn (12) and (13):44,45
(12) |
(13) |
The isotropic materials would display a three-dimensional spherical structure; otherwise, the solid material is anisotropic one. The larger the deviation to spherical structure, the higher the anisotropy. Fig. 4 shows the three-dimensional Young's modulus calculated from the above formula. The curved surface for U3Si2 is close to a circle, and its Au value is 0.13; while the Au values of sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I) are 0.32 and 1.27 respectively, indicating that U3Si2 has the strongest isotropy, followed by sub-U3Si1.5Al0.5, and the most anisotropy belongs to sub-U2.5Si2Al0.5(I).
Fig. 4 3D Young's modulus (E) and projections of the 3D Young's modulus of (a) U3Si2 (b) sub-U3Si1.5Al0.5 (c) sub-U2.5Si2Al0.55(I). |
In order to further study the anisotropy of elasticity, 2D plane projections along the directions of [100], [010] and [001] have also been added into Fig. 4. For U3Si2, the maximum Young's modulus is 150 GPa, while sub-U3Si1.5Al0.5 is 130Gpa, and sub-U2.5Si2Al0.5(I) is 110 GPa. Therefore, it can be concluded that the sub-U3Si1.5Al0.5 still maintains high isotropy, and the Young's modulus of the structure does not change much, while the sub-U2.5Si2Al0.5(I) shows out of the strong anisotropy, the Young's modulus decreases significantly. The conclusions are consistent with the result determined by the Au value.
The anisotropic lattice thermal conductivity of U3Si2, sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I) is calculated, as shown in Fig. 5(a–c), the inset is the curve of Kzz/Kxx with temperature. It is worth noting that smaller values of Kl in the x- and z-directions have recently been reported in ref. 47 with the consideration of the occupation matrix control (OMC). In comparison, the results obtained within this work using VASP with the consideration of the U ramping method; and this is known as a source of discrepancies in DFT + U calculations. As shown in the Fig. 5(a–c), as the temperature increases, the lattice thermal conductivity of the three compounds decreases drastically until it becomes flat. This is because the scattering between phonons and phonons strengthens with the increase of temperature. It can be seen from the illustration that the Kzz/Kxx of U3Si2 is 1.3 at 50 K. As the temperature increases, it rises to a saturation value of 1.65 at about 300 K, and then gradually stabilizes. The general trends of sub-U3Si1.5Al0.5 and sub-U2.5Si2Al0.5(I) are similar to those of U3Si2. The same, but the saturation value is different, the former is 2.95 and the latter is 10.5. Therefore, we understand that through alloying, the lattice thermal conductivity still maintains a high isotropy as the temperature increases. This isotope of the thermal conductivity of the phonon is caused by the dispersion phase space and the similar group velocities in different directions.48 Fig. 5(d) shows the calculated electronic thermal conductivity (Ke/τ), U3Si2, sub-U3Si1.5Al0.5and sub-U2.5Si2Al0.5(I); and it can be seen from the figure that the electronic thermal conductivity of the three compounds all increase linearly with the increase of temperature. In addition, for the compound of sub-U3Si1.5Al0.5 configuration, the increase rate of the electronic thermal conductivity with the increase of temperature is lower than that of U3Si2, while the increase rate of the compound of sub-U2.5Si2Al0.5(I) configuration is higher than that of U3Si2.
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